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Motorola`s Semiconductor Products Sector (SPS) Has Included Low-power

Motorola's Semiconductor Products Sector (SPS) has included low-power improvements to its silicon germanium carbon (SiGe:C) technology for battery-operated wireless applications.
An optimised transistor construction reduces power consumption by up to a
factor of four, and give a 60% improvement in peak frequency performance,
compared with Motorola's existing process.
Cutoff frequencies have been improved from 50GHz to 80GHz (0.35micron
BiCMOS) and 120GHz (0.18micron BiCMOS) with a reduction in the minimum noise
figure from 0.9dB to 0.3dB. This performance was realised through vertical
and lateral scaling of the transistors.
The 0.18micron process was qualified in Q1 2002, with products planned for
early 2003. Because the development was done on existing technology
platforms, designers can use existing models, libraries and standard cell
designs for Motorola's 0.18micron and 0.35micron BiCMOS processes.
Details of the enhancement were presented at the IEEE Bipolar/BiCMOS
Circuits and Technology Meeting (BCTM).
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